Home
Nach oben
Contact
Mission
Service
Publications
Presentation
Forum
Gallery
Highlights
Privacy Policy

 

COREMA - VT (Variable Temperature)    [Data Sheet]

The technology to grow bulk, semi-insulating SiC and GaN single crystals is highly demanding. Different approaches are pursued and material quality is improving at a rapid pace. In order to obtain reproducible resistivity values, the compensation process and the resulting activation energy must be tightly controlled. The most convenient way to do this is to measure resistivity at Variable Temperature and to construct an Arrhenius plot.  

Also, SiC and GaN substrate customers generally request a minimum resistivity at a specified elevated temperature, to be verified by the vendor.

COREMA VT has been developed to meet these demands. A fully automated temperature adjustment, resistivity measurement and Arrhenius plot data evaluation procedure is provided. As usual, the procedure is non-destructive and noncontact. The measurement time is determined by the temperature scanning.

   

   Arrhenius-Plot  with activation energy for SiC

 

 
IF you have questions or comments, please send your E-mail to: info@semimap.de 
Last modification: 24/06/19